| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,419 pcs
|
8419 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
6,878 pcs
|
6878 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The PHE13005 from NXP Semiconductors is a planar-passivated NPN silicon power switching transistor. It is housed in a TO-220AB (SOT78) plastic package, suitable for heatsink mounting.
This transistor is designed for high-frequency electronic lighting ballast applications. Key electrical characteristics include a high collector-emitter peak voltage of 700 V and a maximum continuous collector current of 4 A. The total power dissipation is rated at 75 W at a heatsink temperature of 25 °C.
Static characteristics show a DC current gain (hFE) ranging from 10 to 40 depending on the collector current conditions. The transistor also features low thermal resistance, contributing to its performance in demanding applications. The TO-220AB package has a base, collector, and emitter pin, with the mounting base connected to the collector.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter peak voltage (VCESM) is 700 V.
The maximum continuous collector current (IC) is 4 A.
The total power dissipation (Ptot) is 75 W at or below 25 °C heatsink temperature.
The PHE13005 is supplied in a TO-220AB package.
The DC current gain (hFE) at IC = 1 A, VCE = 5 V, and Tmb = 25 °C ranges from 12 to 40.
The DC current gain (hFE) at IC = 2 A, VCE = 5 V, and Tmb = 25 °C ranges from 10 to 28.