PHE13005 The NXP Semiconductors PHE13005 is a high-voltage NPN silicon power transistor designed for electronic lighting ballast applications. It offers fast switching and a high voltage capability.
Mfr Part #:

PHE13005

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PHE13005 is a high-voltage NPN silicon power transistor designed for electronic lighting ballast applications. It offers fast switching and a high voltage capability.
✓ Total Stock: 15,297 pcs
$ Price Range: $2.23

PHE13005 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,419 pcs
8419 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
6,878 pcs
6878 pcs On Request 1 On Request On Request 12+ On Request On Request

PHE13005 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Junction Temperature
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Storage Temperature

PHE13005 Description

Short technical summary and product information.

The PHE13005 from NXP Semiconductors is a planar-passivated NPN silicon power switching transistor. It is housed in a TO-220AB (SOT78) plastic package, suitable for heatsink mounting.

 

This transistor is designed for high-frequency electronic lighting ballast applications. Key electrical characteristics include a high collector-emitter peak voltage of 700 V and a maximum continuous collector current of 4 A. The total power dissipation is rated at 75 W at a heatsink temperature of 25 °C.

 

Static characteristics show a DC current gain (hFE) ranging from 10 to 40 depending on the collector current conditions. The transistor also features low thermal resistance, contributing to its performance in demanding applications. The TO-220AB package has a base, collector, and emitter pin, with the mounting base connected to the collector.

PHE13005 Quick Information

Product Type: Power Transistor
Canonical Name: NPN Silicon Power Transistor
Subcategory: Power Transistor

PHE13005 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PHE13005 Estimated Pricing

Qty Low High
1+ $2.23 $2.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

PHE13005 Features

  • High voltage capability of 700 V
  • Maximum collector current of 4 A
  • Maximum power dissipation of 75 W
  • TO-220AB package for heatsink mounting
  • Fast switching characteristics

PHE13005 Applications

  • Suitable for high voltage switching applications.
  • Used in electronic lighting ballasts.
  • Ideal for high-speed power switching circuits.
  • Applicable in power regulation and control systems.

PHE13005 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter peak voltage for the PHE13005?

The maximum collector-emitter peak voltage (VCESM) is 700 V.

What is the maximum continuous collector current for the PHE13005?

The maximum continuous collector current (IC) is 4 A.

What is the maximum power dissipation of the PHE13005?

The total power dissipation (Ptot) is 75 W at or below 25 °C heatsink temperature.

What is the package type for the PHE13005 transistor?

The PHE13005 is supplied in a TO-220AB package.

What is the DC current gain (hFE) of the PHE13005 at 1A collector current?

The DC current gain (hFE) at IC = 1 A, VCE = 5 V, and Tmb = 25 °C ranges from 12 to 40.

What is the DC current gain (hFE) of the PHE13005 at 2A collector current?

The DC current gain (hFE) at IC = 2 A, VCE = 5 V, and Tmb = 25 °C ranges from 10 to 28.

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