| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,874 pcs
|
3874 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
301 pcs
|
301 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The PHD97NQ03LT is a logic level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by NXP Semiconductors using TrenchMOS technology. This product is designed for use in computing, communications, consumer, and industrial applications.
Key electrical specifications include a drain-source voltage (Vds) of 25V, a continuous drain current (Id) of 75A at 25°C, and a total power dissipation (Ptot) of 107W at 25°C. The drain-source on-state resistance (Rds(on)) is a maximum of 6.3 mΩ at Vgs = 10V and Id = 25A, with a typical value of 5.3 mΩ. The gate-drain charge (Qgd) is 1.9 nC under specific test conditions.
This FET is suitable for high frequency applications due to its fast switching characteristics. It is packaged in a SOT428 (SC-63; DPAK) surface mount package. The product is lead-free and RoHS3 compliant.
Applications include computer motherboard high frequency DC-to-DC converters, switched-mode power supplies, and voltage regulators.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25V.
The continuous drain current is 75A.
The maximum power dissipation is 107W.
The typical drain-source on-state resistance is 5.3 mΩ.
The PHD97NQ03LT is available in a SOT428 (SC-63; DPAK) package.
Yes, the PHD97NQ03LT is lead-free.
