| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
7,244 pcs
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7244 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The PHD36N03LT is an N-Channel MOSFET manufactured by NXP Semiconductors. This component is designed for various power management applications, offering a Drain-Source Voltage of 30V and a continuous Drain Current of 36A.
Key electrical characteristics include a low Rds On, with a maximum of 8.5mOhm at Vgs = 10V and Id = 36A. The device also exhibits a typical Gate Charge of 45nC and Input Capacitance of 1000pF.
Packaged in a surface-mount TO-252 package, the PHD36N03LT is suitable for applications requiring efficient power handling and compact form factors. Its robust design makes it a reliable choice for power electronics circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage for the PHD36N03LT is 30V.
The continuous drain current for the PHD36N03LT is 36A.
The maximum Rds On for the PHD36N03LT at Vgs = 10V and Id = 36A is 8.5mOhm.
The PHD36N03LT is available in a TO-252 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.