| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,040 pcs
|
2040 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
255 pcs
|
255 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PHD34NQ10T from NXP Semiconductors is a high-performance N-Channel MOSFET. It features a breakdown voltage of 100V and a continuous drain current of 43.4A at 10V Vgs. The MOSFET has a typical gate charge of 65nC and an input capacitance of 1300pF.
Designed for surface mount applications, this component comes in a TO-252-3, DPak (2 Leads + Tab) package. Its operating temperature range is from -55°C to 175°C. The typical drain-source on-resistance is 0.028 Ohms at specified conditions.
This MOSFET is suitable for power switching and general-purpose applications where reliable performance and efficient power handling are required. Its robust construction and electrical characteristics make it a valuable component in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the PHD34NQ10T MOSFET is 100V.
The continuous drain current for the PHD34NQ10T at 10V Vgs is 43.4A.
The typical Rds On for the PHD34NQ10T is 0.028 Ohms.
The PHD34NQ10T MOSFET is supplied in a TO-252-3, DPak (2 Leads + Tab) package.
The operating temperature range for the PHD34NQ10T is -55°C to 175°C.
The PHD34NQ10T is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PHD34NQ10T is 1.