| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,450 pcs
|
2450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PHD34NQ10T from Philips is a high-performance N-Channel MOSFET designed for various power applications. It features a robust 100V drain-source breakdown voltage, making it suitable for circuits requiring significant voltage handling.
With a continuous drain current capability of 43.4A at a typical Vgs of 10V, this MOSFET can handle substantial current loads. The low on-state resistance, typically 28 mOhm at Vgs=10V and Id=21.7A, minimizes power loss and improves efficiency in switching applications.
Packaged in a TO-252 surface-mount case, the PHD34NQ10T is designed for efficient heat dissipation and ease of integration into printed circuit boards. Its operating temperature range of -55°C to 150°C ensures reliability across various environmental conditions.
This MOSFET is well-suited for applications such as power supplies, motor control, and general-purpose switching where high current and voltage capabilities are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V (minimum).
TO-252 surface mount package.
-55°C to 150°C.
43.4A typical.
34mOhm maximum.
2.5V typical.
55nC typical.