| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,100 pcs
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8100 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The PH3230S from NXP Semiconductors is an N-channel TrenchMOSTM logic level FET. It is designed for applications requiring a 30V drain-source voltage and can handle a continuous drain current of up to 100A at 25°C. The MOSFET features a maximum on-state resistance of 3.2 Ohm at Vgs = 4.5V, with a typical value of 2.7 Ohm under the same conditions.
This component has a typical gate charge of 42nC and a threshold voltage of 2V. The maximum gate-source voltage is rated at 20V. With a power dissipation capability of 62.5W, it operates within a temperature range of -55°C to +150°C.
The PH3230S is housed in a SOT-669 (LFPAK) surface-mount package, making it suitable for compact electronic designs. Its mechanical dimensions include a width of 5mm, a length/height of 1.2mm, and a depth of 6.2mm. The part is RoHS3 compliant and has an MSL rating of 1.
The drain-source voltage (Vds) is 30V.
The continuous drain current (Id) is 100A.
The maximum on-state resistance (Rds(on)) at Vgs = 4.5V is 3.2 Ohm, with a typical value of 2.7 Ohm.
The operating temperature range is -55°C to +150°C.
The PH3230S is in a SOT-669 package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.