| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
820 pcs
|
820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Operating Temperature Range | |
| Power Dissipation | |
| SVHC Present |
The PH3230S from NXP is an N-channel TrenchMOSTM logic level FET. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 100A at 25°C. The MOSFET has an on-state resistance (Rds(on)) of 3.2 Ohm maximum and 2.7 Ohm typical at a gate-source voltage (Vgs) of 4.5V. Its threshold voltage (Vgs(th)) is typically 2V.
This component is housed in a SOT-669 (LFPAK) package, suitable for surface mounting (SMD). It operates within a temperature range of -55°C to +150°C, with a maximum junction temperature of 150°C. The power dissipation (Pd) is rated at 62.5W, and it can handle a pulse current (Idm) of 300A.
The PH3230S is RoHS3 compliant and has an MSL rating of 1, indicating unlimited usability under standard conditions. It is also REACH unaffected and contains no SVHC substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
100 A.
42 nC.
-55°C to +150°C.
SOT-669.
2 V.
62.5 W.