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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MACOM Technology Solutions PH3134-10M is an NPN silicon microwave power transistor featuring a common base configuration and broadband Class C operation. It utilizes high efficiency inter-digitized geometry and diffused emitter ballasting resistors for enhanced performance.
This transistor operates in the 3.1-3.4 GHz frequency range, delivering 10W of output power. Key electrical specifications include a minimum power gain of 8 dB and a minimum collector efficiency of 35%. It also features internal input and output impedance matching for simplified integration.
The PH3134-10M is housed in a hermetic metal/ceramic package, ensuring reliability in demanding applications. Absolute maximum ratings include a collector-emitter voltage of 60V and a junction temperature of 200°C. The transistor is designed for pulsed radar applications with a 100µs pulse width and 10% duty cycle.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PH3134-10M transistor is rated for 10W of output power.
The PH3134-10M operates in the 3.1-3.4 GHz frequency range.
The minimum power gain for the PH3134-10M is 8 dB.
The minimum collector efficiency for the PH3134-10M is 35%.
The PH3134-10M is supplied in a hermetic metal/ceramic package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.