| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,593 pcs
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3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,165 pcs
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1165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PESD5V0S2BT is a low capacitance bidirectional double ESD protection diode housed in a compact SOT23 (TO-236AB) surface-mount package. It is engineered to safeguard two data lines from damage caused by electrostatic discharge (ESD) and other transient events.
Key electrical characteristics include a reverse standoff voltage of 5 V, a low diode capacitance of typically 35 pF, and a maximum clamping voltage of 14 V at 12 A peak pulse current. The device provides ESD protection up to 30 kV per IEC 61000-4-2, level 4, and surge protection up to 12 A (8/20 µs waveform) per IEC 61000-4-5.
With its ultra-low leakage current of 5 nA at 5 V and AEC-Q101 qualification, the PESD5V0S2BT is suitable for applications such as cellular handsets and accessories, portable electronics, computers and peripherals, communication systems, and audio/video equipment. The SOT23 package is ideal for space-constrained designs.
This diode offers bidirectional ESD protection, making it versatile for various signal line protection needs. Its robust performance and small footprint make it a reliable choice for transient voltage suppression.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
5 V.
130 W (8/20 µs waveform).
14 V maximum.
12 A (8/20 µs waveform).
SOT23 (TO-236AB) surface-mount package.
30 kV contact discharge per IEC 61000-4-2 and 10 kV per MIL-STD-883.
5 nA maximum.