BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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3,580 pcs
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3580 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The NXP Semiconductors PESD5V0L2UU is a unidirectional double ElectroStatic Discharge (ESD) protection diode. It is designed to protect up to two signal lines from damage caused by ESD and other transients. This device features low diode capacitance, with a typical value of 3.4 pF at 1 MHz and 0V reverse voltage for unidirectional configurations.
The PESD5V0L2UU has a reverse standoff voltage of 5.0 V and a low clamping voltage of 13 V. It offers ESD protection up to 30 kV and can handle a maximum peak pulse power of 70 W (8/20 μs waveform). The diode also exhibits ultra-low leakage current.
This component is supplied in a very small Surface-Mounted Device (SMD) plastic package, specifically the SOT323 (SC-70) package, making it suitable for space-constrained applications. Its AEC-Q101 qualification indicates suitability for automotive and high-reliability applications.
Typical applications include protection for audio and video equipment, communication systems, computers and peripherals, portable electronics, and Subscriber Identity Module (SIM) card protection.
The reverse standoff voltage for the PESD5V0L2UU is 5.0 V.
The typical diode capacitance for the PESD5V0L2UU is 3.4 pF at 1 MHz and 0V reverse voltage for unidirectional configurations.
The maximum clamping voltage for the PESD5V0L2UU is 13 V.
The PESD5V0L2UU provides ESD protection up to 30 kV.
The PESD5V0L2UU is supplied in a SOT323 (SC-70) surface-mounted plastic package.