| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Nexperia PESD5V0L2BT is a low capacitance, double bidirectional ElectroStatic Discharge (ESD) protection diode housed in a small SOT23 Surface-Mounted Device (SMD) plastic package. This diode is engineered to safeguard two signal lines from damage caused by ESD and other transient events.
Key features include ESD protection up to 30 kV, a maximum peak pulse power (PPPM) of 350 W, and a low clamping voltage (VCL) of 28 V. It also boasts an ultra-low leakage current (IRM) of 10 nA and meets IEC 61000-4-2, level 4 standards for ESD protection. The device is AEC-Q101 qualified.
Applications for the PESD5V0L2BT include computers and peripherals, audio and video equipment, cellular handsets and accessories, communication systems, portable electronics, and SIM card protection. Its small SMD package makes it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse standoff voltage is 5 V.
The typical diode capacitance is 75 pF at 1 MHz and 0 V.
The maximum peak pulse power is 350 W.
The maximum peak pulse current is 13 A for an 8/20 µs waveform.
The device offers ESD protection up to 30 kV via contact discharge (IEC 61000-4-2, level 4) and 10 kV via human body model.
The clamping voltage is 28 V.
The leakage current is 10 nA.