| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,661 pcs
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2661 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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1,100 pcs
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1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PESD5V0F1BL is a femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode. It is designed to protect one signal line from damage caused by ESD and other transients. The device features extremely low capacitance, a high ESD maximum rating of 10 kV, and a very low leakage current of less than 1 nA.
With a reverse standoff voltage of 5.5 V and a low ESD clamping voltage of 30 V, the PESD5V0F1BL is suitable for protecting high-speed data lines, antenna protection, and applications like 10/100/1000 Mbit/s Ethernet and FireWire.
The diode is housed in an ultra-small SOD882 surface-mount plastic package, making it ideal for compact electronic designs. Its AEC-Q101 qualification ensures reliability for demanding applications.
Key electrical characteristics include a typical diode capacitance of 0.4 pF at 1 MHz and 0 V, and a peak pulse current rating of 2.5 A for an 8/20 μs waveform. The operating and storage temperature range is -40 °C to +125 °C.
5.5 V.
30 V at 30 ns and ±8 kV.
2.5 A (8/20 μs).
SOD882 surface mount leadless package.
0.4 pF typical, 0.55 pF maximum at 1 MHz and 0 V bias.
10 kV contact discharge per IEC 61000-4-2 and 10 kV HBM per MIL-STD-883.
Less than 1 nA.