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937 pcs
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937 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PESD3V3L5UV is a low capacitance, unidirectional, fivefold ElectroStatic Discharge (ESD) protection diode array. It is housed in a small Surface-Mounted Device (SMD) plastic package, specifically the SOT666 package, designed for surface mounting.
This diode array is engineered to protect up to five unidirectional signal lines from damage caused by ESD and other transients. Key electrical characteristics include a reverse standoff voltage of 3.3 V and a diode capacitance of 22 pF at 1 MHz with 0V reverse voltage. It provides robust ESD protection up to 20 kV and can handle a maximum peak pulse power of 2.5 W. The clamping voltage is a low 12 V, and it exhibits an ultra-low leakage current of 5 nA.
Applications for the PESD3V3L5UV include computers and peripherals, communication systems, audio and video equipment, portable electronics, cellular handsets and accessories, and Subscriber Identity Module (SIM) card protection. Its design makes it suitable for safeguarding sensitive electronic components in these diverse product categories.
The reverse standoff voltage is 3.3V per diode.
The maximum clamping voltage is 12V.
The device is packaged in SOT666, surface mount.
It provides ESD protection up to 20kV.
The maximum leakage current is 5nA.
The typical diode capacitance is 22pF at 0V bias.
The maximum surge current is 2.5A per IEC 61000-4-5.