| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,905 pcs
|
1905 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The NXP Semiconductors PESD36VS2UT is a unidirectional double ESD protection diode housed in a compact SOT23 package. It is engineered to protect up to two signal lines from damage caused by electrostatic discharge (ESD) and other transient events.
This TVS diode features low capacitance (Cd = 17 pF) and a low clamping voltage (VCL = 55 V), making it suitable for sensitive signal lines. It provides robust ESD protection up to 30 kV, meeting IEC 61000-4-2 level 4 standards. The device also handles a peak pulse current of 2.5 A (8/20 µs waveform) and has a maximum peak pulse power of 160 W.
Key electrical characteristics include a reverse standoff voltage of 36 V and an ultra-low leakage current of less than 1 µA. These features ensure minimal impact on signal integrity while providing effective transient suppression.
The PESD36VS2UT is designed for surface-mount applications and is ideal for protecting interfaces in computers, peripherals, audio/video equipment, cellular handsets, SIM cards, portable electronics, and communication systems, including 10/100 Mbit/s Ethernet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse standoff voltage is 36 V.
The typical diode capacitance is 17 pF at 1 MHz.
The maximum peak pulse power is 160 W.
The clamping voltage is 55 V.
The ultra low leakage current is a maximum of 1 uA.
The device offers ESD protection up to 30 kV according to IEC 61000-4-2 level 4.
The rated peak pulse current is 2.5 A for an 8/20 µs waveform.