| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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This NXP Semiconductors PESD24VS2UQ,115 is a double ESD protection diode housed in a SOT663 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. It is engineered to safeguard up to two signal lines from damage caused by electrostatic discharge (ESD) and other transients.
The device provides unidirectional ESD protection with ratings up to 30 kV. Key electrical characteristics include a maximum peak pulse power of 150W at an 8/20μs waveform and a low clamping voltage of 20V at an IPP of 15A. The reverse standoff voltage is 24V, with a diode capacitance of 50 pF at 1 MHz and 0V reverse voltage.
Applications for this series include computers and peripherals, high-speed data lines, audio and video equipment, parallel ports, and communication systems. The SOT663 package is suitable for surface mounting, offering a compact solution for space-constrained designs.
Compliance includes RoHS3 status. The operating temperature range is -65°C to +150°C, with a junction temperature also rated up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse standoff voltage is 24 V.
The peak pulse power is 150 W at an 8/20μs waveform.
The clamping voltage is 20 V at an IPP of 15A, and 36 V.
The PESD24VS2UQ,115 is supplied in a SOT-663 package.
The operating temperature range is -65°C to +150°C.