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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,020 pcs
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13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current - Collector (Ic) (Max) | |
| Voltage - Collector Emitter Breakdown (Max) |
The NXP Semiconductors PEMH4115 is a single NPN bipolar junction transistor (BJT) designed for general-purpose applications. It features a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 0.1A (100mA).
This transistor is housed in a SOT6 package, making it suitable for surface-mount designs where space is a consideration. The specific electrical characteristics, such as DC current gain (hFE) and operating temperature range, are not detailed in the available information but are critical for precise application design.
As a single-element transistor, the PEMH4115 is a fundamental component in many electronic circuits, including amplification and switching tasks. Its specifications suggest suitability for low-power applications. Further details regarding its exact performance parameters and recommended applications would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the PEMH4115 is 100mA.
The collector-emitter breakdown voltage of the PEMH4115 is 50V.
The PEMH4115 is supplied in a SOT6 package.