| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,474 pcs
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14474 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
115 pcs
|
115 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The PEMD12 is an NPN/PNP double Resistor-Equipped Transistor (RET) designed by NXP Semiconductors. It is housed in a compact SOT666 surface-mounted device (SMD) plastic package, making it suitable for space-constrained applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 50V and an output current capability of 100mA per transistor. The device integrates bias resistors (R1 = 47 kΩ, R2 = 47 kΩ), which simplifies circuit design, reduces component count, and lowers pick-and-place costs. This simplifies circuit design and reduces component count.
The PEMD12 is AEC-Q101 qualified, indicating its suitability for automotive and other demanding applications. Its features make it ideal for low current peripheral driving and for replacing general-purpose transistors in digital applications.
This transistor is designed for applications requiring integrated biasing, such as low current peripheral drivers and control of IC inputs. Its resistor-equipped nature simplifies board layout and assembly processes.
The collector-emitter voltage (VCEO) for the PEMD12 is 50V.
The PEMD12 has an output current capability of 100 mA.
The PEMD12 features integrated bias resistors with R1 = 47 kΩ and R2/R1 ratio of 1.
The PEMD12 is supplied in a SOT666 package.
Yes, the PEMD12 is AEC-Q101 qualified.