| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PEMB1 is a PNP/PNP double Resistor-Equipped Transistor (RET) designed for surface-mount applications. It comes in an ultra-small and flat SOT-666 package, reducing component count and pick-and-place costs.
Key electrical characteristics include a collector-emitter voltage (Vceo) of -50V and an output current capability of 100mA. The device integrates bias resistors, with a typical input resistor (R1) of 22 kOhms and a typical resistor ratio (R2/R1) of 1. These features simplify circuit design and are beneficial for low current peripheral driver applications and controlling IC inputs.
The PEMB1 is AEC-Q101 qualified, indicating its suitability for automotive and other demanding applications. Its compact size and integrated resistors make it an efficient replacement for general-purpose transistors in digital applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) for the PEMB1 is -50 V.
The typical input resistor (R1) value in the PEMB1 is 22 kOhms.
The PEMB1 has an output current capability of 100 mA.
The PEMB1 is available in the SOT-666-6 package.
The PEMB1 operates between -65 C and +150 C.