BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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348 pcs
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348 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SEMI PED3312M is a specialized N-channel MOSFET designed for applications requiring specific performance characteristics. It offers a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 22A at a gate-source voltage (Vgs) of 10V. The device exhibits a low typical on-resistance (Rds(on)) of 3.4mΩ at Vgs=10V and 5mΩ at Vgs=4.5V, indicating efficient power handling.
This MOSFET includes integrated ESD protection, enhancing its robustness. It is housed in a compact DFN3x3-8L surface-mount package, suitable for space-constrained designs. The typical gate-source threshold voltage (Vgs(th)) is 0.7V. The PED3312M is suitable for applications where precise control and high current handling in a small form factor are essential.
| Qty | Low | High |
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| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the PED3312M is 20V.
The continuous drain current (Id) for the PED3312M is 22A at Vgs=10V.
The typical drain-source on-resistance (Rds(on)) for the PED3312M at Vgs=10V is 3.4mΩ.
The PED3312M is available in a DFN3x3-8L package.
Yes, the PED3312M has integrated ESD protection.