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PE642DT The NIKO-SEM PE642DT is an N-channel MOSFET in a PDFN 3x3 package. It features a 30V drain-source voltage and a low on-resistance.
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PE642DT

Available from 1 distributors
Mfr Name: NIKO-SEM
NIKO-SEM
The NIKO-SEM PE642DT is an N-channel MOSFET in a PDFN 3x3 package. It features a 30V drain-source voltage and a low on-resistance.
✓ Total Stock: 2,298 pcs

PE642DT Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,298 pcs
On Request
2298 pcs On Request 1 On Request On Request 18+ On Request On Request
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PE642DT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Package / Case
SVHC Present
Termination Style
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PE642DT Description

Short technical summary and product information.

The PE642DT from NIKO-SEM is an N-channel MOSFET designed for various power applications. It offers a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 34A. The on-resistance (Rds(on)) is notably low, measuring 9mΩ at 4.5V gate-source voltage and 31mΩ at 10V.

 

This MOSFET is housed in a compact PDFN 3x3 surface-mount package, making it suitable for space-constrained designs. Its asymmetric termination style and surface mount capability facilitate integration into printed circuit boards.

 

Key electrical characteristics include a typical gate threshold voltage (Vgs(th)) of 616mV, input capacitance (Ciss) of 120pF, output capacitance (Coss) of 83pF, and reverse transfer capacitance (Crss) of 14pF. The total gate charge (Qg) is typically 4nC, with a gate charge delay (Qgd) of 5.2nC.

 

This component is suitable for applications requiring efficient power switching and management.

PE642DT Quick Information

Product Type: MOSFET
Canonical Name: PE642DT MOSFET
Subcategory: N-Channel MOSFET

PE642DT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PE642DT Features

  • 30V drain-source voltage rating.
  • 34A continuous drain current.
  • Low on-resistance down to 2.3mΩ.
  • Compact PDFN 3x3 package.
  • Asymmetric termination style.

PE642DT Applications

  • Efficient power switching applications.
  • Suitable for space-constrained designs.
  • Power management circuits.
  • General purpose switching.

PE642DT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the PE642DT?

30V.

What is the maximum continuous drain current?

34A.

What is the on-resistance at 10V gate drive?

31mΩ maximum.

What is the typical gate threshold voltage?

616mV.

What package does the PE642DT come in?

PDFN 3x3.

What is the total gate charge?

4nC typical.

What is the input capacitance?

120pF typical.

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