| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,472 pcs
|
4472 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Operating Temperature |
The NIKO-SEM PE537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a drain-source breakdown voltage of -30V and a continuous drain current capability of up to 33A at 25°C case temperature.
Key electrical characteristics include a typical gate threshold voltage of -1.6V and a low on-state resistance. At a gate-source voltage of -10V and a drain current of -12A, the typical drain-source on-state resistance is 6.9mΩ, and at -4.5V gate-source voltage, it is 9.9mΩ. The transistor exhibits typical input capacitance (Ciss) of 2803pF and output capacitance (Coss) of 371pF.
With a power dissipation rating of 16.7W at 25°C case temperature, the PE537BA is suitable for moderate power applications. It operates within a junction and storage temperature range of -55°C to 150°C. The device is supplied in a PDFN(3x3) package, indicating surface-mount capability.
This MOSFET is designed with halogen-free and lead-free materials, aligning with environmental standards. Its specifications make it a versatile component for switching and amplification circuits where P-channel logic-level control is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
-1.6V
PDFN (3x3)
33A at 25°C
-55°C to +150°C
RoHS3 Compliant
Yes, Lead-Free