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33,000 pcs
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33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PDTC143EE,115 is a PNP pre-biased bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This component is designed for general-purpose switching and amplification applications.
Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features an integrated base resistor (R1) of 2.2 kOhms, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 30 at 20mA and 5V, with a Vce saturation of 150mV at 500µA and 10mA. The maximum collector cutoff current is 1µA, and it has a maximum power dissipation of 150mW.
This device is supplied in a surface-mount SC-75 package, also known as SOT-416. The SC-75 package is suitable for automated assembly processes and space-constrained applications. Its pre-biased nature simplifies external circuitry, making it a convenient choice for various electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PDTC143EE,115 comes in an SC-75 (SOT-416) surface-mount package.
It is a PNP pre-biased bipolar junction transistor.
The maximum collector current is 100 mA.
The maximum collector-emitter breakdown voltage is 50 V.
Yes, it has a 2.2 kΩ base resistor.
The maximum power dissipation is 150 mW.
The minimum DC current gain is 30 at 20mA collector current and 5V collector-emitter voltage.