| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,320 pcs
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2320 pcs | On Request | 1 | On Request | On Request | 1715+ | On Request | On Request |
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The PDTC123TU115 from NXP Semiconductors is an NPN Resistor-Equipped Transistor (RET) designed for digital applications. This component features built-in bias resistors, simplifying circuit design and reducing component count. It has a collector-emitter voltage (VCEO) of 50V and an output current (IO) capability of up to 100mA.
The transistor includes a bias resistor R1 with a typical value of 2.2 kΩ. It is housed in a SOT323 surface-mount package, making it suitable for automated assembly processes. The PDTC123TU115 serves as a cost-saving alternative for BC847 series in digital applications and is useful for controlling IC inputs and switching loads.
Key features include integrated bias resistors, reduced component count, simplified circuit design, and lower pick-and-place costs. The device is designed for applications requiring digital switching and load control.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTC123TU115 is 50V.
The PDTC123TU115 transistor has a maximum output current (IO) of 100mA.
The bias resistor R1 for the PDTC123TU115 is typically 2.2 kΩ.
The PDTC123TU115 is available in the SOT323 package.