| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN pre-biased transistor from NXP Semiconductors, part number PDTC123JE,115, is designed for general-purpose applications. It features a maximum power dissipation of 150 mW and operates with a voltage rating of 50 V.
The transistor has a DC current gain (hFE) of at least 100 at 10mA and 5V. Its saturation voltage (Vce) is a maximum of 100mV at 250µA and 5mA. It includes an integrated resistor with a value of 47 kΩ.
The PDTC123JE,115 is housed in a compact SC-75 (SOT-416) surface mount package, making it suitable for space-constrained designs. Its pre-biased configuration simplifies circuit design by providing a fixed bias point.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PDTC123JE,115 transistor has a voltage rating of 50 V.
The PDTC123JE,115 transistor can handle up to 100 mA of current.
The PDTC123JE,115 transistor has a power dissipation of 150 mW.
The PDTC123JE,115 transistor has an integrated resistor with a value of 47 kΩ.
The PDTC123JE,115 transistor is supplied in an SC-75, SOT-416 package.