| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,453 pcs
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4453 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The PDTC115TT is an NPN Pre-Biased Bipolar Transistor manufactured by NXP Semiconductors. This component is designed for surface mount applications and comes in a compact SOT-23-3 package.
Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a minimum current gain (hFE) of 100 at 1mA and 5V. The transistor is rated for a maximum power dissipation of 250mW.
Operating within a temperature range of -65°C to 150°C, the PDTC115TT is suitable for various electronic circuits. Its RoHS3 compliant status and lead-free nature make it a consideration for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the PDTC115TT is 50V.
The PDTC115TT can handle a maximum collector current of 100mA.
The PDTC115TT is supplied in a SOT-23-3 package.
The PDTC115TT operates between -65°C and 150°C.
Yes, the PDTC115TT is RoHS3 Compliant.