| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The PDTC114EE,115 from Philips is a single, pre-biased NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a maximum collector-emitter breakdown voltage of 50V and can handle a continuous collector current of up to 100mA. It has a maximum power dissipation of 150mW.
Key electrical characteristics include a DC current gain (hFE) of at least 30 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 150mV at 500µA base current and 10mA collector current. It also includes an integrated base resistor of 10 kΩ.
The transistor operates at frequencies up to 230 MHz. It is supplied in an SC-75 package, also known as SOT-416, suitable for surface mounting.
This pre-biased transistor simplifies circuit design by integrating the necessary biasing resistors, making it suitable for various switching and amplification applications where reduced component count is desired.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the PDTC114EE,115 is 100mA.
The PDTC114EE,115 has a collector-emitter breakdown voltage of 50V.
The PDTC114EE,115 is supplied in an SC-75 package, also known as SOT-416.
The PDTC114EE,115 is stated as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PDTC114EE,115 is 1 Unlimited.