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PDTB113ES The PDTB113ES is a PNP Pre-Biased Transistor from NXP USA Inc. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA.
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PDTB113ES

Available from 1 distributors
Mfr Name: Philips
Philips
The PDTB113ES is a PNP Pre-Biased Transistor from NXP USA Inc. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA.
✓ Total Stock: 2,000 pcs
$ Price Range: $1.16

PDTB113ES Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PDTB113ES Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Supplier Device Package
Transistor Type
Vce Saturation (Max)
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PDTB113ES Description

Short technical summary and product information.

The PDTB113ES is a PNP Pre-Biased Bipolar Junction Transistor (BJT) manufactured by NXP USA Inc. This obsolete part is designed for through-hole mounting and comes in a TO-92-3 package.

 

Key electrical specifications include a maximum collector current (Ic) of 500mA and a collector-emitter breakdown voltage (Vce) of 50V. It has a base resistor (R1) of 1 kOhm and an emitter-base resistor (R2) of 1 kOhm. The minimum DC current gain (hFE) is 33 at 50mA and 5V, with a maximum Vce saturation of 300mV at 2.5mA and 50mA. The maximum collector cutoff current is 500nA, and the maximum power dissipation is 500mW.

 

This transistor is packaged in Tape & Box (TB). Its RoHS status is listed as RoHS3 Compliant, and its Moisture Sensitivity Level (MSL) is 1. The REACH status is noted as Unaffected.

PDTB113ES Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: PDTB113ES PNP Pre-Biased Transistor
Subcategory: Bipolar Junction Transistor (BJT)

PDTB113ES Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PDTB113ES Estimated Pricing

Qty Low High
1+ $1.16 $1.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

PDTB113ES Features

  • PNP Pre-Biased Bipolar Transistor.
  • 50V Collector-Emitter Breakdown Voltage.
  • 500mA Maximum Collector Current.
  • Integrated 1k Ohm Base Resistor.
  • Through Hole TO-92-3 Package.

PDTB113ES Applications

  • Ideal for low-power switching applications.
  • Simplifies circuit design by integrating biasing resistors.
  • Suitable for through-hole PCB assembly.
  • Used in consumer electronics and industrial control circuits.

PDTB113ES FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the PDTB113ES?

500mA.

What is the collector-emitter breakdown voltage?

50V.

What are the built-in resistor values?

Both base resistor R1 and emitter-base resistor R2 are 1kΩ.

What is the minimum DC current gain (hFE)?

33 at 50mA collector current and 5V Vce.

What is the maximum Vce saturation voltage?

300mV at 50mA collector current.

What is the maximum power dissipation?

500mW.

What is the package type?

TO-92-3 (through-hole, also known as TO-226AA).

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