| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,130 pcs
|
2130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
11 pcs
$0.11
|
11 pcs |
$0.11
|
1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The PDTA123ET,215 from NXP Semiconductors is a PNP resistor-equipped transistor designed for general purpose switching and amplification applications. It features built-in bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) which simplify circuit design, reduce component count, and lower pick and place costs.
This transistor has a collector-emitter voltage (VCEO) of -50V and an output current (IO) of -100mA. It is housed in a TO-236AB surface mount package.
Key electrical characteristics include a collector-base voltage (VCBO) of -50V, an emitter-base voltage (VEBO) of -10V, and input voltage limits of +10V (positive) and -12V (negative). The device is suitable for inverter and interface circuits, as well as circuit driver applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-50V
-100mA
Both R1 and R2 are 2.2 kΩ.
TO-236AB
RoHS3 Compliant
1 Unlimited