| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
395 pcs
|
395 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Output Current | |
| SVHC Present | |
| Tape & Reel | |
| Thermal Resistance |
The NXP Semiconductors PDTA115EU is an NPN Resistor-Equipped Transistor (RET) housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package. This component simplifies circuit design by incorporating built-in bias resistors, reducing component count and pick-and-place costs.
Key electrical specifications include a collector-emitter voltage of 50V and an output current of 20mA. The device features a bias resistor R1 (input) with a typical value of 100 kΩ and a typical R2/R1 bias resistor ratio of 1. It is suitable for general purpose switching and amplification, inverter and interface circuits, and as a circuit driver.
The PDTA115EU is AEC-Q101 qualified, indicating its suitability for automotive applications. It operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of 200mW at 25°C ambient temperature when mounted on an FR4 PCB.
This transistor is supplied in an SC-70 package, designed for surface mounting. The standard package quantity is 3000 units on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTA115EU is 50V.
The maximum output current (IO) for the PDTA115EU is 20mA.
The typical value for the input bias resistor (R1) is 100 kΩ.
The PDTA115EU is supplied in an SC-70 surface-mount package.
Yes, the PDTA115EU is AEC-Q101 qualified.