| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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550 pcs
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550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PDTA114YU is a PNP Resistor-Equipped Transistor (RET) from NXP Semiconductors, designed for digital applications in automotive and industrial segments. This component simplifies circuit design and reduces component count due to its built-in bias resistors, specifically R1 = 10 kΩ and R2/R1 ratio of 4.7.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -50V and an output current (IO) capability of up to -100mA. The transistor is housed in a very small SOT-323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for space-constrained applications. It also boasts AEC-Q101 qualification, indicating its suitability for demanding automotive environments.
This transistor serves as a cost-saving alternative for BC847/857 series in digital applications and is ideal for switching loads and controlling IC inputs. The device operates within an ambient temperature range of -65°C to 150°C and has a total power dissipation of 200mW at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTA114YU is -50V when the base is open.
The PDTA114YU has a maximum output current (IO) capability of -100mA.
The PDTA114YU features a built-in bias resistor R1 of 10 kΩ and a R2/R1 bias resistor ratio of 4.7.
The PDTA114YU is available in a SOT-323 (SC-70) surface-mounted plastic package.
Yes, the PDTA114YU is AEC-Q101 qualified.