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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The PDH0980 from Potens Semiconductor Corp. is an N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal on-state resistance and superior switching performance, making it well-suited for high efficiency fast switching applications.
Key electrical specifications include a Drain-Source Breakdown Voltage (BVDSS) of 100V and a continuous Drain Current (ID) of 150A at 25℃. The Static Drain-Source On-Resistance (RDS(ON)) is a maximum of 4.2mΩ at VGS=10V and ID=20A. It also features a Gate Threshold Voltage (VGS(th)) ranging from 1.2V to 2.5V.
This MOSFET is packaged in a TO-263 form factor. Its features include improved dv/dt capability and 100% EAS guaranteed, making it suitable for applications such as networking, load switches, LED applications, and quick chargers.
The drain-source breakdown voltage is 100V (minimum).
The PDH0980 is packaged in TO-263.
The operating junction temperature range is -50°C to 150°C.
150A at TC=25°C.
3.5mΩ typical at VGS=10V, ID=20A.
Typical 1.8V, with range of 1.2V to 2.5V.