| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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368 pcs
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368 pcs | On Request | 1 | On Request | On Request | 1643+ | On Request | On Request |
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| Tape & Reel | |
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The STMicroelectronics PD57006TR-E is an N-Channel, enhancement-mode, lateral MOSFET RF power transistor designed for high gain and broad band commercial and industrial applications. It operates at 28V in common source mode up to 1 GHz.
Key electrical specifications include an output power (POUT) of 6W with 15dB gain at 945MHz. The device is built using ST's LDMOS technology and is mounted in the PowerSO-10RF package, which is optimized for RF needs and offers excellent RF performance and ease of assembly.
This transistor is suitable for applications requiring high linearity, such as car mobile radio. The PowerSO-10RF package is a JEDEC approved, high power SMD package designed for high reliability. Mounting recommendations are available in application note AN1294 on www.st.com/rf.
The PD57006TR-E is supplied in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power is 6W.
The gain is 15dB.
The operating voltage is 28V.
The PD57006TR-E is supplied in the PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.