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1,081 pcs
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1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics PD55008 is an N-Channel, enhancement-mode, lateral MOSFET RF power transistor. It is designed for high gain, broad band commercial and industrial applications, operating at 12V in common source mode up to 1GHz. This transistor boasts excellent gain, linearity, and reliability due to ST's LDMOS technology.
Key electrical specifications include an 8W output power with 17dB gain at 500MHz and 12.5V. It has a maximum drain current of 4A and a power dissipation of 52.8W at 70°C. The device features low input and output capacitance, with CISS at 58pF and COSS at 38pF.
The PD55008 is housed in the PowerSO-10RF plastic package, a true SMD package optimized for RF needs, offering high reliability and ease of assembly. This package is JEDEC approved for high power SMD applications.
This transistor is suitable for applications requiring high performance RF power amplification, such as car mobile radio systems. Its excellent thermal stability and common source configuration make it a robust choice for demanding RF designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power is 8W with 17dB gain at 500MHz and 12.5V.
The maximum drain current is 4A.
The device operates at frequencies up to 1 GHz, with key specifications provided at 500MHz.
The PD55008 is supplied in the PowerSO-10RF package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.