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PD55003 The STMicroelectronics PD55003 is an N-Channel LDMOS RF power transistor designed for high gain and broadband applications. It offers 3W output power at 500MHz with 17dB gain.
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PD55003

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics PD55003 is an N-Channel LDMOS RF power transistor designed for high gain and broadband applications. It offers 3W output power at 500MHz with 17dB gain.
✓ Total Stock: 6,216 pcs
$ Price Range: $0.99

PD55003 Available from 1 distributor

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✓ Non-Authorised
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6,216 pcs
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PD55003 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gain
Input Capacitance
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PD55003 Description

Short technical summary and product information.

The PD55003 from STMicroelectronics is an N-Channel, enhancement-mode, lateral MOSFET RF power transistor. It is designed for high gain, broadband commercial and industrial applications, operating at 12.5V in common source mode up to 1GHz.

 

This transistor boasts excellent gain, linearity, and reliability due to ST's LDMOS technology. It delivers 3W of output power with 17dB gain at 500MHz and 12.5V. Key electrical specifications include a drain-source voltage of 40V, a gate-source voltage of ±20V, and a maximum drain current of 2.5A. Static characteristics include low leakage currents (IDSS, IGSS) and a typical VGS(Q) of 2.0-5.0V. Dynamic characteristics include input capacitance (CISS) of 36pF, output capacitance (COSS) of 24pF, and reverse transfer capacitance (CRSS) of 2.4pF, all measured at 1MHz.

 

The PD55003 is housed in a PowerSO-10RF plastic package, which is JEDEC approved and optimized for RF applications, offering high reliability and ease of assembly. The junction-to-case thermal resistance is 3.0°C/W, and the maximum operating junction temperature is 165°C. Its superior linearity performance makes it an ideal solution for car mobile radio applications.

PD55003 Quick Information

Product Type: RF Power Transistor
Canonical Name: PD55003 N-Channel Enhancement-Mode Lateral MOSFET RF Power Transistor
Subcategory: RF Power MOSFET

PD55003 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PD55003 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PD55003 Features

  • N-Channel LDMOS RF power transistor.
  • 3W output power at 500MHz.
  • 17dB gain at 500MHz.
  • 40V drain-source voltage rating.
  • PowerSO-10RF plastic package.

PD55003 Applications

  • Ideal for RF amplification circuits
  • Suitable for high-frequency switching
  • Used in RF transmitters and receivers
  • Applicable in communication infrastructure

PD55003 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PD55003?

The maximum drain-source voltage is 40V.

What is the typical output power of the PD55003 at 500MHz?

The typical output power is 3W at 500MHz.

What is the typical gain of the PD55003 at 500MHz?

The typical gain is 17dB at 500MHz.

What is the operating voltage for the PD55003?

The typical operating voltage is 12.5V.

What package is the PD55003 supplied in?

The PD55003 is supplied in a PowerSO-10RF package.

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