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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
112 pcs
|
112 pcs | On Request | 1 | On Request | On Request | 1904+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The PCP1103-TD-H from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 30V and can handle a maximum collector current of 1.5A.
This transistor operates with a maximum power dissipation of 3.5W and has a transition frequency of 450MHz. The DC current gain (hFE) is a minimum of 200 at 100mA and 2V. It is designed for surface mounting and comes in a TO-247AA package.
The operating temperature range for this device is up to 150°C (TJ). It is specified with a Vce saturation of 375mV maximum at 15mA base current and 750mA collector current, and a collector cutoff current of 100nA maximum.
Compliance information indicates RoHS3 status, REACH unaffected, and Moisture Sensitivity Level 1. This component is intended for use in general-purpose amplification and switching circuits where PNP characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30V.
The maximum collector current is 1.5A.
The operating temperature is up to 150°C (TJ).
The package type is TO-243AA.
The RoHS status is RoHS3 Compliant.