PCP1103-TD-H The On Semiconductor PCP1103-TD-H is a PNP bipolar junction transistor designed for surface mount applications. It features a 30V collector-emitter breakdown voltage and a maximum collector current of 1.5A.
Mfr Part #:

PCP1103-TD-H

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor PCP1103-TD-H is a PNP bipolar junction transistor designed for surface mount applications. It features a 30V collector-emitter breakdown voltage and a maximum collector current of 1.5A.
Total Stock: 5,112 pcs
$ Price Range: $0.48

PCP1103-TD-H Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
112 pcs
112 pcs On Request 1 On Request On Request 1904+ On Request On Request

PCP1103-TD-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PCP1103-TD-H Description

Short technical summary and product information.

The PCP1103-TD-H from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 30V and can handle a maximum collector current of 1.5A.

 

This transistor operates with a maximum power dissipation of 3.5W and has a transition frequency of 450MHz. The DC current gain (hFE) is a minimum of 200 at 100mA and 2V. It is designed for surface mounting and comes in a TO-247AA package.

 

The operating temperature range for this device is up to 150°C (TJ). It is specified with a Vce saturation of 375mV maximum at 15mA base current and 750mA collector current, and a collector cutoff current of 100nA maximum.

 

Compliance information indicates RoHS3 status, REACH unaffected, and Moisture Sensitivity Level 1. This component is intended for use in general-purpose amplification and switching circuits where PNP characteristics are required.

PCP1103-TD-H Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: PNP Bipolar Junction Transistor
Subcategory: BJT - Single

PCP1103-TD-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PCP1103-TD-H Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PCP1103-TD-H Features

  • PNP bipolar junction transistor.
  • 30V collector-emitter breakdown voltage.
  • 1.5A maximum collector current.
  • 450MHz transition frequency.
  • Surface mount TO-243AA package.

PCP1103-TD-H Applications

  • Used in power switching circuits
  • Suitable for signal amplification
  • Ideal for high-frequency applications
  • Designed for compact electronic assemblies

PCP1103-TD-H FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the PCP1103-TD-H?

The collector-emitter breakdown voltage is 30V.

What is the maximum collector current for this PNP transistor?

The maximum collector current is 1.5A.

What is the operating temperature range of the PCP1103-TD-H?

The operating temperature is up to 150°C (TJ).

What is the package type for the PCP1103-TD-H?

The package type is TO-243AA.

Is the PCP1103-TD-H RoHS compliant?

The RoHS status is RoHS3 Compliant.

Home
Account

Categories