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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,000 pcs
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36000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Frequency - Transition | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Packages | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Collector Emitter Breakdown |
This PCP1103-P-TD-H is a PNP bipolar junction transistor manufactured by onsemi. It is designed for surface mount applications and comes in a TO-243AA package.
Key electrical specifications include a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 1.5A. The transistor offers a minimum DC current gain (hFE) of 200 at 100mA and 2V, with a Vce saturation voltage of 375mV maximum at 15mA and 750mA. Its transition frequency is rated at 450MHz.
The operating temperature range for this device is up to 150°C (TJ). It has a maximum power dissipation of 3.5W. The current collector cutoff is a maximum of 100nA (ICBO).
This component is suitable for various general-purpose amplification and switching applications where a PNP transistor is required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30V.
The maximum collector current is 1.5A.
The operating temperature range is up to 150°C (TJ).
The package type is TO-243AA.
The minimum DC current gain (hFE) is 200 at 100mA, 2V.
The transition frequency is 450MHz.