PCP1103-P-TD-H The PCP1103-P-TD-H is a PNP bipolar transistor from onsemi. It features a 30V breakdown voltage and a 1.5A collector current, housed in a surface mount TO-243AA package.
Mfr Part #:

PCP1103-P-TD-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The PCP1103-P-TD-H is a PNP bipolar transistor from onsemi. It features a 30V breakdown voltage and a 1.5A collector current, housed in a surface mount TO-243AA package.
Total Stock: 36,000 pcs
$ Price Range: $0.48

PCP1103-P-TD-H Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
36,000 pcs
36000 pcs On Request 1 On Request On Request On Request On Request On Request

PCP1103-P-TD-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Lead Spacing
Mounting Type
Operating Temperature
Packages
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown

PCP1103-P-TD-H Description

Short technical summary and product information.

This PCP1103-P-TD-H is a PNP bipolar junction transistor manufactured by onsemi. It is designed for surface mount applications and comes in a TO-243AA package.

 

Key electrical specifications include a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 1.5A. The transistor offers a minimum DC current gain (hFE) of 200 at 100mA and 2V, with a Vce saturation voltage of 375mV maximum at 15mA and 750mA. Its transition frequency is rated at 450MHz.

 

The operating temperature range for this device is up to 150°C (TJ). It has a maximum power dissipation of 3.5W. The current collector cutoff is a maximum of 100nA (ICBO).

 

This component is suitable for various general-purpose amplification and switching applications where a PNP transistor is required. Its surface mount package facilitates integration into compact electronic designs.

PCP1103-P-TD-H Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: On Semiconductor PCP1103-P-TD-H PNP Bipolar Transistor
Subcategory: Single

PCP1103-P-TD-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PCP1103-P-TD-H Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PCP1103-P-TD-H Features

  • PNP bipolar junction transistor.
  • 30V collector-emitter breakdown voltage.
  • 1.5A maximum collector current.
  • 450MHz transition frequency.
  • Surface mount TO-243AA package.

PCP1103-P-TD-H Applications

  • General purpose amplification circuits.
  • Switching applications.
  • Power supply circuits.
  • Signal processing.

PCP1103-P-TD-H FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage is 30V.

What is the maximum collector current?

The maximum collector current is 1.5A.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is used?

The package type is TO-243AA.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 200 at 100mA, 2V.

What is the transition frequency?

The transition frequency is 450MHz.

Home
Account

Categories