| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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170 pcs
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170 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Micron Technology PC48F4400P0VB02E is a high-performance Parallel NOR Flash Memory with a density of 512Mbit. It utilizes Multi-Level Cell technology for high density at a low cost and features an asymmetrically-blocked architecture with configurable parameter and main blocks.
This device offers an initial access time of 85 ns and supports a 52 MHz synchronous-burst read mode with zero wait states, providing a clock-to-data output of 17 ns. It also supports a 25 ns asynchronous-page read mode and various burst modes. The core voltage ranges from 1.7 V to 2.0 V, while the I/O voltage ranges from 1.7 V to 3.6 V.
Packaged in a 64-EasyBGA (10x13) format, the PC48F4400P0VB02E is designed for surface mounting. It operates within a temperature range of -40°C to +85°C (TC). The memory is organized as 32M x 16 and uses the ETOX VIII process technology.
Security features include one-time programmable registers for device identification and user-programmable bits, along with absolute write protection and power-transition lockout. It is compatible with Basic and Extended Command Sets and Common Flash Interface.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Core voltage range is 1.7V to 2.0V, I/O voltage range is 1.7V to 3.6V.
64-EasyBGA (10x13mm) or 64-LBGA surface mount package.
-40°C to 85°C (case temperature).
85ns minimum access time.
52 MHz in synchronous-burst read mode, 40 MHz typical in 4-word synchronous read.
512 Mbit.
ETOX VIII process technology, NOR Flash.