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304 pcs
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304 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Micron Technology PC28F064M29EWHA is a 64Mbit embedded parallel NOR Flash memory designed for various applications requiring reliable non-volatile storage. It operates with a supply voltage ranging from 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.
Key electrical specifications include a typical random access time of 60ns for BGA packages and 70ns for TSOP packages. The memory supports asynchronous random or page reads with a page access time of 25ns. Program time is efficient, with 0.56µs per byte without VPPH and 0.31µs per byte with VPPH.
This NOR Flash memory offers robust features such as program/erase suspend and resume capabilities, blank check operation, and unlock bypass. It also includes software and hardware protection mechanisms, including password protection and V PP/WP# pin protection. The device is built using 65nm single-bit cell process technology.
The PC28F064M29EWHA is available in a 64-FBGA (11x13) package and is suitable for surface mount applications. It operates within an ambient temperature range of -40°C to +85°C, making it suitable for demanding environments. The memory is compliant with JESD47H standards, offering 100,000 minimum erase cycles per block and 20 years of data retention.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The core supply voltage range is 2.7V to 3.6V, and the I/O buffer supply range is 1.65V to 3.6V.
The operating temperature range is -40°C to +85°C.
The device is available in a 64-TBGA package (64-EasyBGA 8x10mm) and also in 64-FBGA (11x13mm) and 64-LBGA packages.
The 64Mbit memory is organized as 128 main blocks of 64KB each, or optionally eight 8KB boot blocks plus 127 main blocks of 64KB each.
The device supports 100,000 erase cycles per block and provides 20 years of data retention.