| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,566 pcs
|
3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
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| Automotive Grade | |
| Halogen Free | |
| Medical Grade | |
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| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Military Grade | |
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| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
This Parallel NOR Flash Memory from Micron Technology, part number PC28F00AM29EWLD, offers a memory size of 1Gbit and utilizes a 65nm multilevel cell (MLC) process. It operates within a supply voltage range of 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.
The device provides asynchronous random and page read capabilities with a page access time of 25ns and a random access time of 100ns for the Fortified BGA package. It supports a 512-word program buffer, enabling efficient programming with a typical program time of 0.88µs per byte.
Memory organization is structured into uniform blocks of 128-Kbytes. The flash memory is designed for embedded applications, featuring program/erase suspend and resume capabilities, unlock bypass, block erase, chip erase, and fast buffered/batch programming. It also includes software and hardware protection features.
The PC28F00AM29EWLD is housed in a 64-FBGA (11x13) Surface Mount package. It operates across an ambient temperature range of -40°C to +85°C. The device is compliant with RoHS and Halogen-free standards, offering 100,000 minimum erase cycles per block and 20 years of data retention.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage for the PC28F00AM29EWLD ranges from 2.7V to 3.6V. The I/O Buffer Supply Voltage (V CCQ) ranges from 1.65V to 3.6V.
The PC28F00AM29EWLD operates within an ambient temperature range of -40°C to 85°C.
The memory size of the PC28F00AM29EWLD is 1Gbit.
The typical random access time for the PC28F00AM29EWLD is 100ns for the Fortified BGA package and 110ns for the TSOP package.
The typical page access time for the PC28F00AM29EWLD is 25ns.
The PC28F00AM29EWLD can withstand a minimum of 100,000 erase cycles per block, compliant with JESD47H.
The typical data retention period for the PC28F00AM29EWLD is 20 years.