| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 1050+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The NXP Semiconductors PBSS5620PA is a PNP low VCEsat (Breakthrough In Small Signal) transistor. This component is encapsulated in an ultra-thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package, offering medium power capability.
Key electrical characteristics include a collector current (I(C)) of 6A and a collector-emitter breakdown voltage (V(BR)CEO) of 20V. The transistor is constructed from silicon and is designed for PNP operation.
This transistor is suitable for applications requiring a low VCEsat PNP device. Its SMD package facilitates surface mounting on printed circuit boards, making it compatible with automated assembly processes. The NPN complement to this device is the PBSS4620PA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.21 | $2.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 6A.
The collector-emitter breakdown voltage is 20V.
It is a PNP low VCEsat (BISS) transistor.
The PBSS5620PA is in an SOT1061 package.
It is a surface-mount device.