PBSS5620PA The NXP Semiconductors PBSS5620PA is a PNP low VCEsat (BISS) transistor. It features a 20V collector-emitter voltage and a 6A collector current.
Mfr Part #:

PBSS5620PA

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PBSS5620PA is a PNP low VCEsat (BISS) transistor. It features a 20V collector-emitter voltage and a 6A collector current.
✓ Total Stock: 3,500 pcs
$ Price Range: $2.21

PBSS5620PA Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 1050+ On Request On Request

PBSS5620PA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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PBSS5620PA Description

Short technical summary and product information.

The NXP Semiconductors PBSS5620PA is a PNP low VCEsat (Breakthrough In Small Signal) transistor. This component is encapsulated in an ultra-thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package, offering medium power capability.

 

Key electrical characteristics include a collector current (I(C)) of 6A and a collector-emitter breakdown voltage (V(BR)CEO) of 20V. The transistor is constructed from silicon and is designed for PNP operation.

 

This transistor is suitable for applications requiring a low VCEsat PNP device. Its SMD package facilitates surface mounting on printed circuit boards, making it compatible with automated assembly processes. The NPN complement to this device is the PBSS4620PA.

PBSS5620PA Quick Information

Product Type: Power Bipolar Transistor
Canonical Name: PNP low VCEsat (BISS) Transistor
Subcategory: Power Bipolar Transistor

PBSS5620PA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS5620PA Estimated Pricing

Qty Low High
1+ $2.21 $2.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS5620PA Features

  • PNP low VCEsat (BISS) transistor.
  • 6A maximum collector current.
  • 20V collector-emitter breakdown voltage.
  • SOT1061 surface-mount package.
  • Silicon semiconductor material.

PBSS5620PA Applications

  • Suitable for low VCEsat switching applications.
  • Ideal for small-signal amplification circuits.
  • Used in compact surface-mount power management modules.
  • Applicable in low-voltage, high-current switching designs.

PBSS5620PA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector current for the PBSS5620PA?

The maximum collector current is 6A.

What is the collector-emitter breakdown voltage of the PBSS5620PA?

The collector-emitter breakdown voltage is 20V.

What type of transistor is the PBSS5620PA?

It is a PNP low VCEsat (BISS) transistor.

What package is the PBSS5620PA in?

The PBSS5620PA is in an SOT1061 package.

How is the PBSS5620PA mounted?

It is a surface-mount device.

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