| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,239 pcs
|
5239 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PBSS5480X is a PNP low VCEsat (Bipolar In-Situ Switching) transistor manufactured by NXP Semiconductors. This component is designed for applications requiring high efficiency and low heat generation.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -80 V and a continuous collector current (IC) of -4 A. It also offers a peak collector current (ICM) of -10 A and an equivalent on-resistance (RCEsat) of 75 mΩ. The transistor operates with a maximum power dissipation of 2.5 W and has a typical frequency of 125 MHz.
This transistor is housed in a SOT89 plastic package, suitable for surface mounting. The package features a collector pad for enhanced heat transfer. The operating temperature range is from -65 °C to 150 °C.
Applications for the PBSS5480X include medium power peripheral drivers, strobe flash units, inverter applications, power switches for LAN and ADSL systems, medium power DC-to-DC conversion, and battery chargers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-80 V
SOT89 (SC-62) surface mount package
-65°C to 150°C
125 MHz
-4 A DC continuous, -10 A peak
75 mΩ
2.5 W