| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The Nexperia PBSS5350T,215 is a PNP low VCEsat transistor designed for power management applications. It features a low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat, contributing to improved efficiency and reduced heat generation.
This transistor has a maximum collector-emitter voltage of 50V and a continuous collector current capability of 2A, with a repetitive peak collector current of 3A. The gain bandwidth product (fT) is 100MHz. It is housed in a compact SOT-23 (TO-236AB) surface-mounted device plastic package.
Key applications include low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO). The operating temperature range is -65°C to 150°C.
With its small footprint and robust electrical characteristics, the PBSS5350T,215 is suitable for various power control and switching tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is -50 V.
The continuous collector current (Ic) is -2 A.
The package type is SOT-23.
The operating temperature range is -65°C to 150°C.