| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The PBSS5320T,215 from NXP Semiconductors is a PNP transistor suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 20V and can handle a maximum collector current of 2A. The device has a maximum power dissipation of 540mW and operates at a transition frequency of 100MHz.
This transistor is housed in a surface mount TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3. Its operating temperature range extends up to 150°C (TJ). Key electrical characteristics include a Vce saturation of 300mV at 300mA/3A and a minimum DC current gain (hFE) of 200 at 1A/2V.
The PBSS5320T,215 is designed for applications requiring a reliable PNP transistor in a compact surface-mount form factor. Its specifications make it suitable for signal processing, digital circuits, and low-power amplification tasks within consumer electronics, automotive, and industrial control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the PBSS5320T,215 is 2 A.
The collector-emitter breakdown voltage (Vce) for the PBSS5320T,215 is 20 V.
The maximum operating temperature (TJ) for the PBSS5320T,215 is 150°C.
The PBSS5320T,215 is supplied in a TO-236AB surface mount package.
The RoHS status of the PBSS5320T,215 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PBSS5320T,215 is 1 (Unlimited).
The REACH status for the PBSS5320T,215 is REACH Unaffected.