CAT93C86BVI-GT3
On Semiconductor
The On Semiconductor CAT93C86BVI-GT3 is a 16Kbit EEPROM utilizing the Microwire interface. It operates within a voltage range of 1.8V to 5.5V and a temperature range of -40°C to 85°C.
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118 pcs
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118 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PBSS5320T is a PNP low VCEsat transistor designed for power management applications. It features a low collector-emitter saturation voltage (VCEsat) and corresponding low saturation resistance (RCEsat), contributing to improved efficiency and reduced heat generation.
This transistor boasts a high collector current capability of up to 2A continuous and 3A repetitive peak current. It operates with a maximum collector-emitter voltage of -20V.
The PBSS5320T is supplied in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Its small size and surface-mount capability make it suitable for various power management applications, including DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).
Key electrical characteristics include a maximum collector-emitter voltage of -20V and a continuous collector current of -2A. The RCEsat is typically 75mΩ at -2A and -200mA base current.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS5320T is -20V.
The continuous collector current (IC) rating of the PBSS5320T is -2A.
The typical collector-emitter saturation resistance (RCEsat) is 75mΩ when IC = -2A and IB = -200mA at 25°C.
The PBSS5320T is supplied in a SOT23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
