BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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2,735 pcs
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2735 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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183 pcs
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183 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
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The NXP Semiconductors PBSS4350T,215 is an NPN bipolar junction transistor designed for general-purpose applications. It features a maximum collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 2A. The transistor exhibits a high DC current gain (hFE) of 300 and a transition frequency (fT) of 100MHz.
This device is housed in a surface-mount SOT-23-3 package, making it suitable for compact electronic designs. It operates within a temperature range of -65C to +150C. The PBSS4350T,215 is RoHS3 compliant and lead-free.
Key electrical characteristics include a maximum power dissipation of 300mW and a Vce saturation of 370mV at 300mA/3A. Its robust specifications make it a reliable choice for various switching and amplification circuits.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
SOT-23-3 (also TO-236-3, Micro3, SSD3, SST3).
-65°C to +150°C.
300 at 1 A collector current and 2 V collector-emitter voltage.
Typically 100 MHz.
370 mV maximum at 300 mA base current and 3 A collector current.
5 V.