| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,899 pcs
|
2899 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
540 pcs
|
540 pcs | On Request | 1 | On Request | On Request | 1538 | On Request | On Request |
| Category | |
| Manufacturer Name |
The Nexperia PBSS4250X is a single NPN bipolar junction transistor (BJT) housed in an UPAK surface-mount package. It is designed for applications requiring a robust transistor with a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of up to 2A. The device offers a maximum power dissipation of 1000mW and a gain bandwidth product (fT) of 100MHz.
With a minimum operating temperature of -65°C and a maximum of +150°C, the PBSS4250X is suitable for a wide range of environmental conditions. Its DC current gain (hFE) is rated up to 300 at 0.1A and 2V. The transistor is mounted using SMD/SMT techniques and comes in a Reel package, with a factory pack quantity of 1000 units.
This bipolar transistor is a component within the broader category of discrete semiconductor products. Its specifications make it suitable for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS4250X is 50V.
The maximum continuous collector current (Ic) is 2A.
The power dissipation (Pd) is 1000mW.
The operating temperature range is from -65°C to +150°C.
The PBSS4250X is supplied in the UPAK package.
The maximum DC current gain (hFE) at 0.1A and 2V is 300.