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PBSS4041NZ115

The NXP Semiconductors PBSS4041NZ115 is an NPN low VCEsat transistor designed for switching and amplification. It offers a 60V collector-emitter voltage and 7A collector current capability.

✓ Total Stock: 4,020 pcs

$ Price Range: $0.75

PBSS4041NZ115 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

PBSS4041NZ115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	Specialized ICs
Manufacturer Name	NXP Semiconductors
Ambient Temperature	-55 to 150 °C
Junction Temperature	150 °C
Mounting Type	Surface Mount
Storage Temperature	-65 to 150 °C
Tape & Reel	Tape & Reel

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PBSS4041NZ115 Description

Short technical summary and product information.

The NXP Semiconductors PBSS4041NZ115 is a high-performance NPN bipolar junction transistor (BJT) designed for efficient switching and amplification applications. It features a very low collector-emitter saturation voltage (VCEsat) of 195mV at 7A, ensuring high energy efficiency and reduced heat generation.

With a maximum collector current capability of 7A and a peak collector current of 15A, this transistor is suitable for demanding power management tasks. It boasts a high collector current gain (hFE) of at least 250 at 4A and 2V, providing strong drive capability. The transition frequency of 105MHz supports fast switching operations.

Packaged in a compact SOT-223 (SC-73) surface-mount plastic package, the PBSS4041NZ115 is ideal for space-constrained Printed-Circuit Board (PCB) designs. Its AEC-Q101 qualification indicates suitability for automotive and industrial applications. Key applications include load switching, battery-driven devices, power management circuits, charging circuits, and power switches for motors and fans.

This transistor operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.6W at 25°C ambient temperature when mounted on a suitable PCB.

PBSS4041NZ115 Quick Information

Product Type: NPN Transistor

Series: PBSS4041NZ

Canonical Name: NPN low VCEsat transistor

Subcategory: Single

PBSS4041NZ115 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PBSS4041NZ115 Estimated Pricing

Qty	Low	High
1+	$0.75	$0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4041NZ115 Features

Very low collector-emitter saturation voltage.
High collector current capability.
High collector current gain.
AEC-Q101 qualified.
Compact SOT-223 surface-mount package.

PBSS4041NZ115 Applications

Suitable for load switching.
Ideal for battery-driven devices.
Used in power management circuits.
Applicable for charging circuits.
Powers switches like motors and fans.

PBSS4041NZ115 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the PBSS4041NZ115?

The maximum collector-emitter voltage (VCEO) for the PBSS4041NZ115 is 60 V.

What is the maximum continuous collector current of the PBSS4041NZ115?

The maximum continuous collector current (IC) for the PBSS4041NZ115 is 7 A.

What is the Vce saturation voltage at high current for the PBSS4041NZ115?

The Vce saturation voltage is 195mV at a base current of 350mA and a collector current of 7A.

What is the package type for the PBSS4041NZ115 transistor?

The PBSS4041NZ115 is supplied in a SOT-223 (also known as SC-73) surface-mount plastic package.

What is the operating temperature range for the PBSS4041NZ115?

The ambient operating temperature range for the PBSS4041NZ115 is -55°C to 150°C.