| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,335 pcs
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5335 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PBSS3515VS is a PNP low VCEsat double transistor designed for general purpose switching and muting applications. It offers a collector-emitter voltage of -15 V and a collector current of up to -500 mA per transistor.
This device boasts a very small 1.6 x 1.2 mm ultra-thin SOT666 package, making it ideal for space-constrained designs. Its straight leads facilitate self-alignment during soldering, and its flat lead design improves thermal behavior. The PBSS3515VS can replace two SC75/SC89 packaged transistors, reducing PCB area and pick-and-place costs.
Key electrical characteristics include a typical DC current gain (hFE) of 200 at VCE = -2 V and IC = -10 mA. The total power dissipation is rated at 300 mW per device at an ambient temperature of 25 °C. The maximum junction temperature is 150 °C.
Applications for the PBSS3515VS include low frequency driver circuits, audio frequency general purpose amplifier applications, and battery-driven equipment such as mobile phones, video cameras, and hand-held devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS3515VS is -15 V.
The maximum collector current (IC) for the PBSS3515VS is -500 mA.
The typical DC current gain (hFE) of the PBSS3515VS is 200 under conditions of VCE = -2 V and IC = -10 mA at 25 °C.
The PBSS3515VS is supplied in a SOT-666 plastic, surface-mounted package.
The total power dissipation (Ptot) for the PBSS3515VS is 300 mW per device at an ambient temperature of 25 °C.