DistyParts Icon
PBSS2540E The NXP Semiconductors PBSS2540E is an NPN low VCEsat transistor designed for efficient power management. It features a 40V collector-emitter voltage and a 500mA collector current capability.
Mfr Part #:

PBSS2540E

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PBSS2540E is an NPN low VCEsat transistor designed for efficient power management. It features a 40V collector-emitter voltage and a 500mA collector current capability.
✓ Total Stock: 11,393 pcs

PBSS2540E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
10,100 pcs
On Request
10100 pcs On Request 1 On Request On Request 14+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,293 pcs
On Request
1293 pcs On Request 1 On Request On Request 1222+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PBSS2540E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Package / Case
Power Dissipation
SVHC Present
Storage Temperature
Tape & Reel
View Similar Products (0)

PBSS2540E Description

Short technical summary and product information.

The PBSS2540E from NXP Semiconductors is an NPN low VCEsat Breakthrough in Small Signal (BISS) transistor. It is designed for high efficiency and reduced heat generation, making it suitable for applications requiring smaller PCB footprints.

 

Key electrical characteristics include a collector-emitter voltage of 40V and a continuous collector current of 500mA. The transistor also offers a low collector-emitter saturation voltage (VCEsat) and high collector current gain (hFE) at high collector currents. Its transition frequency is rated at 450MHz.

 

This transistor is housed in a compact SOT416 (SC-75) surface-mount plastic package. Its features make it well-suited for applications such as DC-to-DC conversion, MOSFET gate driving, motor control, charging circuits, and low-power switching applications like motors and fans.

PBSS2540E Quick Information

Product Type: NPN Transistor
Series: PBSS
Canonical Name: NPN Low VCEsat Breakthrough in Small Signal (BISS) Transistor
Subcategory: Single

PBSS2540E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

PBSS2540E Features

  • Low collector-emitter saturation voltage.
  • High collector current capability.
  • High collector current gain.
  • Efficient heat generation.
  • Compact SOT416 (SC-75) package.

PBSS2540E Applications

  • Used in DC-to-DC conversion.
  • Suitable for MOSFET gate driving.
  • Applied in motor control circuits.
  • Incorporated in charging circuits.
  • Features in low power switches.

PBSS2540E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of PBSS2540E?

Maximum 40V.

What is the package type?

SC-75 (SOT-416) surface mount.

What is the maximum junction temperature?

150°C (TJ).

What is the DC current gain (hFE)?

Minimum 100 at 100mA, 2V.

What is the transition frequency?

450MHz.

What is the maximum power dissipation?

250mW.

What is the collector-emitter saturation voltage?

250mV maximum at 50mA base, 500mA collector.

Home
Account

Categories