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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Peak | |
| Collector-Emitter Saturation Resistance | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NXP Semiconductors PBSS2515E,115 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor. It is housed in an ultra-small SOT416 (SC-75) surface-mounted device (SMD) plastic package.
Key electrical specifications include a collector-emitter voltage (VCEO) of 15V and a continuous collector current (IC) of 0.5A. The device offers a low collector-emitter saturation voltage (VCEsat) of 250mV at 50mA/500mA and a high collector current gain (hFE) of 150 minimum at 100mA/2V. Its maximum power dissipation is 250mW, and it operates at frequencies up to 420MHz.
This transistor is suitable for applications such as DC-to-DC conversion, MOSFET gate driving, motor control, charging circuits, low power switches, and portable devices. Its high efficiency results in less heat generation, and it requires a smaller PCB area compared to conventional transistors.
The PBSS2515E,115 is supplied in an SC-75 package, designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 15V.
The maximum continuous collector current is 0.5A.
The power dissipation is 250mW.
The PBSS2515E,115 is in an SC-75, SOT-416 package.
The operating temperature is up to 150°C (TJ).
The DC current gain (hFE) is a minimum of 150 at 100mA, 2V.
The Vce saturation is a maximum of 250mV at 50mA, 500mA.